2SK3831 no.8028-1/4 features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. ? motor drive, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 85 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 340 a allowable power dissipation p d 2.5 w tc=25 c 100 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 271 mj avalanche current *2 i av 85 a *1. v dd =20v, l=50 m h, i av =85a *2. l 50 m h, 1 pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =43a 30 50 s static drain-to-source on-state resistance r ds (on)1 i d =43a, v gs =10v 10 13 m w r ds (on)2 i d =43a, v gs =4v 13 18 m w input capacitance ciss v ds =20v, f=1mhz 5250 pf output capacitance coss v ds =20v, f=1mhz 780 pf reverse transfer capacitance crss v ds =20v, f=1mhz 525 pf marking : k3831 continued on next page. 21405qa ts im tb-00000311 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 2SK3831 n-channel silicon mosfet general-purpose switching device applications ordering number : enn8028
2SK3831 no.8028-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 40 ns rise time t r see specified test circuit. 370 ns turn-off delay time t d (off) see specified test circuit. 355 ns fall time t f see specified test circuit. 315 ns total gate charge qg v ds =30v, v gs =10v, i d =85a 113 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =85a 19 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =85a 28 nc diode forward voltage v sd i s =85a, v gs =0 1.18 1.5 v package dimensions switching time test circuit unit : mm 2056a unclamped inductive circuit 1 : gate 2 : drain 3 : source sanyo : to-3pb 15.6 2.6 3.5 1.2 14.0 1.6 1.0 2.0 0.6 20.0 20.0 15.0 1.3 3.2 4.8 2.0 0.6 5.45 5.45 1.4 1 2 3 pw=10 m s d.c. 1% p. g 50 w g s d i d =43a r l =0.7 w v dd =30v v out 2SK3831 v in 10v 0v v in 50 w 15v 0v 3 50 w rg dut v dd l drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it07697 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it07698 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 10 20 30 40 50 60 70 80 90 100 4.0v 6.0v 8.0v 10v v gs =3.0v tc= 25 c 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100 v ds =10v tc=75 c --25 c 25 c tc= --25 c 75 c 25 c
2SK3831 no.8028-3/4 gate-to-source voltage, v gs -- v r ds (on) -- v gs it07699 case temperature, tc -- c r ds (on) -- tc it07700 --50 --25 150 5 0 10 15 20 25 030 10 15 20 25 5 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it07704 100 10000 1000 it07703 it07702 diode forward voltage, v sd -- v i f -- v sd drain current, i d -- a it07701 0.1 1.0 23 57 100 7 5 3 2 10 100 forward transfer admittance, ? y fs ? -- s ? y fs ? -- i d 0.6 0.8 0.4 1.0 1.2 1.4 0.2 0 0.01 0.1 5 7 3 2 1.0 5 7 3 2 10 5 7 3 2 100 5 7 3 2 forward current, i f -- a 7 5 3 2 1.0 7 7 5 5 3 2 10 2 3 57 2 3 57 f=1mhz 1.0 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 30 25 20 15 10 5 i d = 43a 0 25 50 75 100 125 tc=75 c 25 c --25 c tc= 75 c v gs =0v 25 c -- 25 c 010 20 30 40 50 60 70 80 90 100 110 120 0 2.0 4.0 6.0 8.0 9.0 1.0 3.0 5.0 7.0 10 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds =30v i d =85a 7 5 3 2 coss ciss crss static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w i d =43a, v gs =4v i d =43a, v gs =10v 25 c tc= --25 c v ds =10v 75 c it07705 it07706 2 0.1 23 100 1.0 57 23 10 57 2 3 57 100 1000 10 3 5 7 2 3 5 7 drain current, i d -- a sw time -- i d switching time, sw time -- ns t d (off) t f t d (on) t r 0.1 1.0 10 100 3 2 5 7 3 2 5 7 2 2 3 3 5 5 7 7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a 23 57 23 5 5 77 1.0 0.1 10 100 23 v dd =30v v gs =10v 100 m s 1ms 10ms 100ms dc operation 10 m s tc=25 c single pulse i dp =340a i d =85a <10 m s operation in this area is limited by r ds (on).
2SK3831 no.8028-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2005. specifications and information herein are subject to change without notice. ps it07707 it07708 0 0 20 40 60 80 100 120 100 120 140 160 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w 80 60 40 20 0 0 20 40 60 80 100 120 2.5 3.0 140 160 2.0 1.5 1.0 0.5 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w note on usage : since the 2SK3831 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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